发明名称 Nonlinear optical silica material and nonlinear optical device
摘要 A nonlinear optical silica material mainly consisting of SiO2-GeO2 to which hydrogen or halogen element X is added. Oxygen bonded to Ge contained in the nonlinear optical silica material is replaced by H or X, and one Ge has two Ge-O bonds and one Ge-H (or Ge-X) bond at Ge. points where nonlinearity is exhibited in the silica material. The Ge-H (or Ge-X) bond does not relate to a crystal network, so that when the polarity is oriented in order to exhibit nonlinearity at Ge., an electric field to be applied can be lowered, and when a optical semiconductor hybrid element or the like is produced, other portions of the semiconductor elements can be prevented from being broken or degraded in performance. An insulating film can be interposed between the semiconductor substrate and the nonlinear optical silica film to prevent undesired impurities from dispersing into the semiconductor substrate and other elements and preventing a defect from being caused in the crystal of the substrate due to the silica film.
申请公布号 US6376086(B1) 申请公布日期 2002.04.23
申请号 US19990362547 申请日期 1999.07.28
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 NAGASHIMA TOMONORI;NAKAMURA NAOKI
分类号 G02F1/35;C03C3/06;C03C3/076;C03C3/11;C03C4/00;G02F1/355;(IPC1-7):B32B9/00;C01B33/00 主分类号 G02F1/35
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