发明名称 |
Semiconductor wafer manufacturing process |
摘要 |
A process for manufacturing polished-like first-grade semiconductor wafers is disclosed. The process greatly simplifies the amount of polishing required while producing high quality semiconductor wafers. After a semiconductor wafer is sliced from a single crystal ingot, lapped and ground, the wafer is subjected to a double side fine grinding operation, a micro-etching operation, and an annealing operation to significantly improve the quality of the front surface. To complete to process the semiconductor wafer is flash polished to impart a specular finish on the front surface. In accordance with the present invention the semiconductor wafers may also be produced having a denuded zone capable of internal gettering.
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申请公布号 |
US6376395(B2) |
申请公布日期 |
2002.04.23 |
申请号 |
US20000481080 |
申请日期 |
2000.01.11 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
VASAT JIRI L.;STEFANESCU ANDREI;HANLEY THOMAS M. |
分类号 |
H01L21/302;H01L21/322;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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