发明名称 Semiconductor wafer manufacturing process
摘要 A process for manufacturing polished-like first-grade semiconductor wafers is disclosed. The process greatly simplifies the amount of polishing required while producing high quality semiconductor wafers. After a semiconductor wafer is sliced from a single crystal ingot, lapped and ground, the wafer is subjected to a double side fine grinding operation, a micro-etching operation, and an annealing operation to significantly improve the quality of the front surface. To complete to process the semiconductor wafer is flash polished to impart a specular finish on the front surface. In accordance with the present invention the semiconductor wafers may also be produced having a denuded zone capable of internal gettering.
申请公布号 US6376395(B2) 申请公布日期 2002.04.23
申请号 US20000481080 申请日期 2000.01.11
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 VASAT JIRI L.;STEFANESCU ANDREI;HANLEY THOMAS M.
分类号 H01L21/302;H01L21/322;(IPC1-7):H01L21/26 主分类号 H01L21/302
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