发明名称 |
Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device |
摘要 |
A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.
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申请公布号 |
US6376273(B2) |
申请公布日期 |
2002.04.23 |
申请号 |
US19980093588 |
申请日期 |
1998.06.08 |
申请人 |
3M INNOVATIVE PROPERTIES COMPANY |
发明人 |
CHIEN FEN-REN;HAASE MICHAEL A.;MILLER THOMAS J. |
分类号 |
H01L31/02;H01L33/28;H01L33/40;H01L33/44;H01S5/028;H01S5/042;H01S5/347;(IPC1-7):H01L21/00;H01L21/28;H01L21/320 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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