Post chemical mechanical polish (CMP) planarizing substrate cleaning method employing enhanced substrate hydrophilicity

摘要

Within a method for removing from over a substrate a chemical mechanical polish (CMP) residue layer there is first provided a substrate. There is then formed over the substrate: (1) a chemical mechanical polish (CMP) substrate layer having an aperture formed therein; (2) a chemical mechanical polish (CMP) planarized patterned layer formed within the aperture within the chemical mechanical polish (CMP) substrate layer; and (3) a chemical mechanical polish (CMP) residue layer formed upon at least one of the chemical mechanical polish substrate layer and the chemical mechanical polish (CMP) planarized patterned layer, where at least one of the chemical mechanical polish (CMP) substrate layer and the chemical mechanical polish (CMP) planarized patterned layer has a first aqueous contact angle. There is then treated the at least one of the chemical mechanical polish (CMP) substrate layer and the chemical mechanical polish (CMP) planarized patterned layer having the first aqueous contact angle to provide at least one of a hydrophilic chemical mechanical polish (CMP) substrate layer and a hydrophilic chemical mechanical polish (CMP) planarized patterned layer having a second aqueous contact angle less than the first aqueous contact angle. Finally, there is then removed the chemical mechanical polish (CMP) residue layer from the at least one of the hydrophilic chemical mechanical polish (CMP) substrate layer and the hydrophilic chemical mechanical polish (CMP) planarized patterned layer with an aqueous cleaner composition.