| 摘要 |
A thin film transistor comprises a gate electrode 18 formed on a substrate 10, a gate insulation film 20, a semiconductor layer 22, a source electrode 36a and a drain electrode 36b. The gate electrode, the source electrode or the drain electrode include a first conductor film 12, a second conductor film 14 and a third conductor film 16. The first conductor film is formed of a metal selected out of Al, Cu and Ag, or an alloy of a metal, as a main component, selected out of Al, Cu and Ag, and has the side surfaces sloped. The second conductor film is formed of a film of Mo containing nitrogen, or an alloy of Mo, as a main component, containing nitrogen, and has the side surfaces sloped. The third conductor film is formed of Mo or an alloy of Mo as a main component.
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