Lateral bipolar transistor formed on an insulating layer

摘要

In a bipolar transistor improved to exhibit an excellent high-frequency property by decreasing the width of the intrinsic base with without increasing the base resistance, an emitter region, intrinsic base region and collector region are closely aligned on an insulating layer, and the intrinsic base region and the collector region make a protrusion projecting upward from the substrate surface. The protrusion has a width wider than the width of the intrinsic base region.