| 摘要 |
A process and an integrated circuit are intended for obtaining an adjustable electrical resistance, in which a first voltage is applied to an integrated MOS transistor on its source, its gate and its substrate, and a second voltage is applied on its drain, the first and second voltages being able to initiate a breakdown of the MOS transistor by:avalanche of the drain/substrate junction;biasing of the parasitic bipolar transistor of the MOS transistor;irreversible breakdown of the drain/substrate junction; andshorting between the drain and the source.
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