| 摘要 |
In a reference current generating circuit, a gate voltage of a MOS transistor for supplying a reference current, is controlled by a selected one of a plurality of different divided voltages obtained from a reference voltage by a resistor ladder circuit internally provided in an integrated circuit. Thus, it is possible to supply the reference current having a high precision and a high stability in relation to a variation of the threshold VT of the MOS transistor caused by a variation in the manufacturing process and a temperature change. On the other hand, an external resistor, which was required in the prior art reference current generating circuit, is no longer necessary.
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