发明名称 |
Semiconductor wafer manufacturing process |
摘要 |
A semiconductor wafer manufacturing process is disclosed wherein extremely flat, double side polished semiconductor wafers having enhanced gettering characteristics on the back surface are produced. The process includes creating an enhanced gettering layer on the back surface of a double side polished semiconductor wafer. A protective layer is subsequently grown on the enhanced gettering layer and the wafer is subsequently subjected to a second double side polishing operation. Finally, the protective layer is removed and the front surface final polished to produce an extremely flat semiconductor wafer having enhanced gettering characteristics on the back surface.
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申请公布号 |
US6376335(B1) |
申请公布日期 |
2002.04.23 |
申请号 |
US20000506105 |
申请日期 |
2000.02.17 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
ZHANG DAVID;NG KANYIN;ERK HENRY F. |
分类号 |
H01L21/302;H01L21/322;(IPC1-7):H01L21/322 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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