发明名称 Method of manufacturing flexible display with transfer from auxiliary substrate
摘要 A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.
申请公布号 US6376333(B1) 申请公布日期 2002.04.23
申请号 US20000503531 申请日期 2000.02.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;ARAI YASUYUKI;TERAMOTO SATOSHI
分类号 G02F1/13;A42B3/22;G02F1/1333;G02F1/136;G02F1/1368;G09F9/30;H01L21/02;H01L21/20;H01L21/265;H01L21/336;H01L21/77;H01L27/12;H01L27/32;H01L29/786;(IPC1-7):H01L21/00;H01L21/30 主分类号 G02F1/13
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