Lamination structure, wiring structure, manufacture thereof, and semiconductor device

摘要

A first layer is disposed on the principal surface of a substrate. An adhesive layer made of Si containing fluorocarbon is disposed on the first layer. A second layer is disposed on the adhesive layer. One of the first and second layers is made of a material selected from a group consisting of a material whose main component is Si containing inorganic material, a metal, and an inorganic metal compound, and the other is made of an organic insulating film. Tight contactness of the organic layer to the layer whose main component is inorganic material can be improved.