发明名称 |
Method of hard mask patterning |
摘要 |
A method of patterning a hard mask, the comprising the following steps. A semiconductor structure is provided. A conductor film is formed over the semiconductor structure. An oxide layer is formed over the conductor film. A patterned metal oxide layer is formed over the conductor film. The oxide layer and the conductor film are etched, using the metal oxide layer as a hard mask, to form a patterned structure.
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申请公布号 |
US6376379(B1) |
申请公布日期 |
2002.04.23 |
申请号 |
US20000495344 |
申请日期 |
2000.02.01 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
QUEK SHYUE FONG;ANG TING CHEONG;SONG JUN;LOONG SANG YEE |
分类号 |
H01L21/033;H01L21/311;H01L21/3213;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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