发明名称 |
Process for forming a semiconductor device and a conductive structure |
摘要 |
Semiconductor devices and conductive structures can be formed having a metallic layer. In one embodiment, a semiconductor device includes an amorphous metallic layer (22) and a crystalline metallic layer (42). The amorphous metallic layer (22) helps to reduce the likelihood of penetration of contaminants through the amorphous metallic layer (22). A more conductive crystalline metallic layer (42) can be formed on the amorphous metallic layer (22) to help keep resistivity relatively low. When forming a conductive structure, a metal-containing gas and a scavenger gas flow simultaneously during at least one point in time. The conductive structure may be part of a gate electrode.
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申请公布号 |
US6376349(B1) |
申请公布日期 |
2002.04.23 |
申请号 |
US20000487472 |
申请日期 |
2000.01.19 |
申请人 |
MOTOROLA, INC. |
发明人 |
TOBIN PHILIP J.;ADETUTU OLUBUNMI;MAITI BIKAS |
分类号 |
C23C16/18;H01L21/28;H01L21/285;H01L21/3205;H01L23/52;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L21/320;H01L21/476;H01L21/144 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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