| 摘要 |
A nonvolatile ferroelectric memory device with a row redundancy circuit and method for relieving a failed address thereof, can relieve a row address failed in a main cell area and can reduce a layout size of a redundancy circuit. The nonvolatile ferroelectric memory device with row redundancy circuit can include a main cell area having first and second cell array portions each with a plurality of cell arrays, first and second local wordline drivers to respectively drive the first and second cell array portions, and a main wordline driver that outputs a control signal for activating any one of the first and second local wordline drivers of the main cell area. A redundancy cell area has first and second redundancy cell array portions each with a plurality of cell arrays and first and second redundancy local wordline drivers to correct errors generated when a row address of the main cell area is selected. A row redundancy driving circuit outputs an inactive signal to the main wordline driver responsive to the row address errors and outputs a control signal to the first and second redundancy local wordline drivers of the redundancy cell area. A single local decoder applies a driving signal, which will be applied to first and second split wordlines corresponding to any cell of the main cell area and the redundancy cell area, to the first and second local wordline drivers of the main cell area or the redundancy cell area.
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