发明名称 |
Method of semiconductor device fabrication |
摘要 |
A method of semiconductor device fabrication comprising forming at least the indentation in a surface of a semiconductor body. The indentation is partially filled with a filler material such that walls of the indentation are exposed above an upper surface of the filler material. First and second dopants are introduced through the exposed walls of the indentation and first and second doped regions formed. The first doped region extends into the semiconductor body around the filled portion of the indentation to a first region boundary which is at a predetermined first depth relative to the upper surface of the filler material. The second doped region extends into the semiconductor body around the filled portion of the indentation to a second region boundary which is at a predetermined second depth relative to the upper surface of the filler material. The first and second depths are different such that a region of predetermined thickness is defined adjacent the indentation between the first and second boundaries.
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申请公布号 |
US6376314(B1) |
申请公布日期 |
2002.04.23 |
申请号 |
US20000530802 |
申请日期 |
2000.05.05 |
申请人 |
ZETEX PLC. |
发明人 |
JERRED PAUL ANTONY |
分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L21/336;H01L21/338;H01L21/425 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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