| 摘要 |
PURPOSE: An acidic electrolyte suitable to removal of excess material from a semiconductor wafer in electroplating baths is provided. CONSTITUTION: A method for removing excess material from a semiconductor wafer by using a chemical mechanical planarization process which includes contacting the semiconductor wafer with a rotating polishing pad thereby removing the excess material from the semiconductor wafer; wherein the semiconductor wafer has been prior electroplated by a copper electroplating composition including at least one soluble copper salt, and an electrolyte including two or more acids. |
