| 摘要 |
PROBLEM TO BE SOLVED: To provide a diamond semiconductor device for high power, which can carry a high current. SOLUTION: A diamond semiconductor device is constituted in a structure that a first diamond layer 1 consists of a high-orientation diamond film formed by a vapor synthesys and with a diamond layer 2 formed on the layer 1, a third diamond layer 3 and a thin insulating film 4 are selectively formed on this layer 2. Source and control electrodes 6 and 5 are respectively formed on the layer 3 and the film 4, which are formed in such a way, while a drain electrode 7 is formed on the side of the other main surface 1b of the layer 1 and a current between the source and drain electrodes 6 and 7 flows through a space limiting current mechanism.
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