SHOWERHEAD, SUBSTRATE TREATMENT APPARATUS, AND SUBSTRATE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a showerhead, a substrate treatment apparatus, and a substrate manufacturing method in which high density plasma can be stably generated in a processing chamber. SOLUTION: The showerhead 10 is disposed in the process chamber 2 of a plasma CVD apparatus 1. The showerhead 10 has a plurality of gas introducing holes 11, and the process gas is fed toward a wafer W placed on a pedestal 5 via the gas introducing holes 11. A bead-blasted roughened surface B is formed all over a surface facing the pedestal 5 in the showerhead 10. Thus the area of the surface facing the pedestal 5 in the showerhead 10 is increased, plasma of high density is uniformly generated in the process chamber 2.