发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PURPOSE: A method for fabricating a semiconductor integrated circuit device is provided to improve resolution of a pattern, by transcribing a predetermined pattern while using a photomask in a semiconductor wafer. CONSTITUTION: A photoresist layer is deposited on the semiconductor wafer. A predetermined pattern is transcribed into the semiconductor wafer by irradiating exposure light to the photoresist layer on the wafer through the photomask. Main apertures(3) transfer the predetermined pattern to a mask substrate(1), a half-tone film(2) on the mask substrate and an aperture formed by removing a part of the half-tone film. Auxiliary apertures(4) are not resolved on the semiconductor wafer as the aperture formed by removing a part of the half-tone film is used to improve the resolution of the pattern. |
申请公布号 |
KR20020029612(A) |
申请公布日期 |
2002.04.19 |
申请号 |
KR20010062319 |
申请日期 |
2001.10.10 |
申请人 |
HITACHI.LTD. |
发明人 |
HASEGAWA NORIO;IKEDA SHUJI;INOUE OSAMU |
分类号 |
G03F1/36;G03F1/68;G03F7/20;G03F7/22;H01L21/027;H01L21/28;H01L21/768;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
G03F1/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|