发明名称 METHOD FOR FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE: A method for fabricating a semiconductor integrated circuit device is provided to improve resolution of a pattern, by transcribing a predetermined pattern while using a photomask in a semiconductor wafer. CONSTITUTION: A photoresist layer is deposited on the semiconductor wafer. A predetermined pattern is transcribed into the semiconductor wafer by irradiating exposure light to the photoresist layer on the wafer through the photomask. Main apertures(3) transfer the predetermined pattern to a mask substrate(1), a half-tone film(2) on the mask substrate and an aperture formed by removing a part of the half-tone film. Auxiliary apertures(4) are not resolved on the semiconductor wafer as the aperture formed by removing a part of the half-tone film is used to improve the resolution of the pattern.
申请公布号 KR20020029612(A) 申请公布日期 2002.04.19
申请号 KR20010062319 申请日期 2001.10.10
申请人 HITACHI.LTD. 发明人 HASEGAWA NORIO;IKEDA SHUJI;INOUE OSAMU
分类号 G03F1/36;G03F1/68;G03F7/20;G03F7/22;H01L21/027;H01L21/28;H01L21/768;H01L21/8242;H01L27/10;H01L27/108 主分类号 G03F1/36
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