| 摘要 |
PROBLEM TO BE SOLVED: To avoid generation of channeling, even if an impurity ion beam irradiated from a prescribed elevation angle against the surface of a silicon wafer which is turned successively. SOLUTION: The initial position of the silicon wafer 11 is controlled so that the irradiating direction of the ion-beam irradiating means 33 is not parallel to the lattice plane of the silicon crystal. Therefore, channeling is not generated in a first irradiation on the silicon wafer 11. In the ion-beam irradiation thereafter, since the silicon wafer 11 is rotated, the irradiating direction may have a chance of being parallel to the lattice plane of the silicon crystal. However, the generation of the channeling is suppressed, in the silicon wafer 11 to which impurity ions have been implanted.
|
