| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the diffusion of copper on the interface between copper wiring and a cap film for increasing electromigration resistance, and to secure reliability in the copper wiring. SOLUTION: This semiconductor device has an insulating film 12 formed on a substrate 11, a recess 13 (for example, a groove) formed in the insulating film 12, a conductive layer 15 buried in the recess 13 via a barrier layer 14, and a cobalt tungsten phosphor covering 16 that is connected to the barrier layer 14 at the side of the conductive layer 15, and at the same time covers the conductive layer 15 at the opening side of the recess 13. |
