发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor light emitting element of a light from a green to an ultraviolet wide region considering an environment by using a hexagonal crystal ZnO material. SOLUTION: An active layer 101 contains at least element Zn and element O. The layer 101 further contains at least one kind of S, Se and Te. At least one of clad layers 102 and 103 contains element Zn and element O. The layer 101, the layers 102 and 103 are made of hexagonal crystals. The hexagonal ZnO has a large exciton bonding energy. The exciton of high density exists even at the ambient temperature. Accordingly, a high light emission efficiency is expected. A light emitting layer contains a composition of a hexagonal crystal Zn (OX) (X=Se, Se or Te) mainly containing the hexagonal crystal ZnO. Similarly, a high light emitting efficiency is expected.
申请公布号 JP2002118330(A) 申请公布日期 2002.04.19
申请号 JP20000311904 申请日期 2000.10.12
申请人 RICOH CO LTD 发明人 ITO AKIHIRO
分类号 H01S5/347;(IPC1-7):H01S5/347 主分类号 H01S5/347
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