| 摘要 |
PURPOSE: Compositions useful for repair and electroplating of seed layers are provided, and methods of repairing and electroplating such seed layers are provided. CONSTITUTION: The electroplating bath includes a source of metal ions, an electrolyte and one or more branched suppressor compounds. The method of depositing a metal layer on a substrate comprises the steps of a) contacting a substrate with an electroplating bath comprising a source of metal ions, an electrolyte and one or more branched suppressor compounds; and b) subjecting the electroplating bath to a current density sufficient to deposit the metal layer. The method of manufacturing an electronic device comprises the steps of a) contacting an electronic device with an electroplating bath comprising a source of metal ions, an electrolyte and one or more branched suppressor compounds; and b) subjecting the electroplating bath to a current density sufficient to deposit the metal layer on the electronic device. The article of manufacture comprises an electronic device substrate containing one or more apertures, each aperture walls containing an electrolytic copper deposit obtained from an electroplating composition that comprises at least one soluble copper salt, an electrolyte and one or more branched suppressor compounds. The method for removing excess material from a semiconductor wafer by using a chemical mechanical planarization process comprises the step of contacting the semiconductor wafer with a rotating polishing pad thereby removing the excess material from the semiconductor wafer, wherein the semiconductor wafer has been prior electroplated by a copper electroplating composition including at least one soluble copper salt, an electrolyte and one or more branched suppressor compounds. The method of repairing a seed layer comprises the steps of a) contacting a substrate comprising a seed layer having oxidation or discontinuities; b) contacting the substrate with an electroplating bath comprising a source of metal ions, an electrolyte and one or more branched suppressor compounds; and c) subjecting the electroplating bath to a current density sufficient to deposit sufficient metal to provide a substantially uniform seed layer. |
