发明名称 METHOD OF APPROXIMATING DISTRIBUTION OF IMPLANTED IONS
摘要 PROBLEM TO BE SOLVED: To provide a method of approximating distribution of implanted ions, in which an implanted-ion distribution function is provided which can be unequivocally extracted while the extracted result will not be influenced by the subjectivity of the extractor in extracting required parameters, using the implanted-ion distribution function. SOLUTION: This method is based on a model, in which the distribution function similar to a distribution function Na(x) for the main part is partially incorporated inside the distribution function Nc(x) for the channeling tail.
申请公布号 JP2002118073(A) 申请公布日期 2002.04.19
申请号 JP20000305891 申请日期 2000.10.05
申请人 FUJITSU LTD 发明人 SUDO RITSUO;SUZUKI KUNIHIRO
分类号 H01L21/20;H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/20
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