| 摘要 |
PROBLEM TO BE SOLVED: To enhance the concentration of phosphor(P) in a wafer, when phosphorus doping is carried out to a silicon film in a batch-type reactor by PH3 (phosphine). SOLUTION: The manufacturing method of a semiconductor device has a heat diffusion process for diffusing phosphor in the silicon film of the wafer 5, by introducing phosphine or a mixed gas containing the phosphine into reactors 1 and 3 for heat-treating the wafer 5. In the manufacturing method, the temperature in the reactors for loading the wafer 5 is set to 350 deg.C or lower for restraining the growth of natural oxide film with respect to the wafer 5, and the pressure in the reactors in a heat diffusion process is set to 250 Torr or higher, for enhancing P concentration to be doped on the wafer 5.
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