| 摘要 |
PROBLEM TO BE SOLVED: To provide a copper-based lead material for a semiconductor that does not easily warp even if etching machining is made, and to provide a method for manufacturing the lead material. SOLUTION: In this copper-based lead material for the semiconductor device composed by a copper-based sheet bar that is subjected to rolling or correction machining after the rolling, curvature (k) in warpage is set to 0.003 or less when the etching machining with arbitrary thickness is carried out in the range of a plate thickness of 0 to 2/3 from the surface of the copper-based sheet bar. The k is obtained by substituting height y (mm) and the shortest distance x (mm) between ends for the following expression k=1/ρ,ρ=(y/2)+(x2/8y) when a sample is arranged while a projection side faces upward as shown in figure 1. In this case, the sample is cut from the copper- based sheet bar, and has a length in parallel with a rolling direction of 100 to 200 mm and a width at right angle to the rolling direction of 20 mm. The lead material can be easily manufactured by applying an elongation percentage of 0.01% or more and less than 0.30% to the copper-based sheet bar for performing the correction machining A, and by applying a tension of 5 N/mm2 or more and less than 50 N/mm2 for performing the correction machining B in a heating oven. |
