SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To overcome the difficulty such that a reliable resonator surface having sufficient lifetime cannot be obtained due to quick occurrence of an end face deterioration accompanying a continuous operation of constant light output in a conventional high output semiconductor laser using a GaAs substrate. SOLUTION: The semiconductor laser device comprises an optical resonator having a semiconductor crystal on an upper part of the semiconductor substrate. The resonator has an oxide layer and uses a matrix made of that of the resonator and containing no arsenic oxide or a layer obtained by hydrogen treating and oxygen treating the matrix of the resonator on at least one surface of the resonator.