| 摘要 |
PROBLEM TO BE SOLVED: To normally apply bias voltage to a substrate even when sputtering is repeated many times in the sputtering for depositing a conductive film while applying the bias voltage to the substrate. SOLUTION: Gas such as argon is introduced in a sputter chamber 1 by a gas introducing system 2, voltage is applied from a sputter power source 4 to a target 3 formed of a conductive material to generate sputter discharge while holding the substrate 9 by a substrate holder 5. Sputter particles emitted from the target 3 reach the substrate 9 to deposit the conductive film. The bias voltage is applied to the substrate 9 by a bias power source 52. The substrate holder 5 has a holder shield 53 diagonally behind a substrate holding surface as a member of grounding electric potential, and a recess 54 for preventing film continuation so that a deposit film 501 on the surface of the holder shield 53 is not continuous to a deposit film 504 of the substrate holding surface. The substrate holding surface is smaller than the substrate 9, and the sputter particles on the recess 54 for preventing film continuation are shielded by a peripheral portion of the substrate 9 projected from the substrate holding surface.
|
