METHOD FOR FABRICATING DYNAMIC RANDOM ACCESS MEMORY

摘要

PURPOSE: A method for fabricating a dynamic random access memory(DRAM) is provided to reduce a burden of an annealing process in forming a polysilicon layer and to decrease interfacial resistance between the polysilicon layers, by simultaneously forming a plug having the same material as a stud when a storage contact of the same as or similar to the level of the stud is formed. CONSTITUTION: A bit line(19) and a bit line contact(17) are formed on a substrate(10) where an interlayer dielectric(13) is stacked on the structure of a metal oxide semiconductor(MOS) transistor. An interlayer dielectric(20) is stacked on the bit line. The interlayer dielectric is selectively etched to form a storage node contact hole and a stud hole. A conductive layer is stacked while the contact hole and the stud hole are formed, so that a contact plug and the stud are simultaneously formed.