| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a nitride semiconductor capable of manufacturing a nitride semiconductor hexagonal post faucet laser by avoiding a formation of a polycrystal AlGaN, and to provide a nitride semiconductor light emitting element having a flat vertical faucet and high performance without current leakage or the like in the case of implanting a current. SOLUTION: The method for growing the nitride semiconductor comprises a first step of forming nitride semiconductor lasers 2, 3 and 4 on a board 1, a second step of forming a mask material 5 having an opening on the layers 2, 3 and 4, a third step of removing by etching parts of the layers 2, 3 and 4 directly under the opening and the mask material 5 side of the board 1, a fourth step of removing the material 5, and a fifth step of forming a nitride semiconductor laser 6-11 by a crystal growing method of a film layer smaller than the depth of the etching of the third step, by separating by upper surfaces and side faces of the layers 2, 3 and 4 retained on the board 1 and the surface of the board 1 removed by etching and forming the layer.
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