REFLECTIVE PHOTOMASK

摘要

PURPOSE: A reflective photomask is provided to be adapted to a fine process using an exposure wavelength of an extreme-ultraviotet(EUV) region, by preventing damage to the surface of a reflective layer and by preventing a decrease of a reflectance ratio. CONSTITUTION: The reflective layer(12) is formed on a substrate(11), composed of a multilayered layer wherein two different layers are stacked. A buffer layer(13) composed of a metal layer is formed on the reflective layer. An absorbing material pattern(14) is composed of a material capable of absorbing X-rays formed on the buffer layer, having a predetermined pattern type. The metal layer of the buffer layer is ruthenium.