| 摘要 |
PROBLEM TO BE SOLVED: To provide an imager device for which a leakage from a sidewall of a photodiode is reduced. SOLUTION: The imager (100) is provided with photosensor pixels (110) arranged in a pixel array, and each photosensor pixel includes a photodiode (126) having the sidewall, on which a gate dielectric layer is disposed and a field plate (150) disposed around a photodiode body. The field plate comprises amorphous silicon, disposed on the gate dielectric layer and extends substantially completely around the sidewall of the photodiode. The field plate is coupled electrically with a common electrode, so as to generate an electric field around the photodiode body in correspondence with a potential of the common electrode of a photographing array.
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