| 摘要 |
PROBLEM TO BE SOLVED: To contribute to the reduction of patterning costs by enabling patterning without using a comparatively expensive intermediate member such as dry film. SOLUTION: Inside a chamber 10, a transparent electrode 11 is provided on a light transparent supporting stand 10a and on a surface opposite thereto, a mask 12 formed with an opening OP corresponding to the shape of a pattern to be formed is located. Then, on the transparent electrode 11, a semiconductor board 13 is located and a wafer 14 formed with a conductor film 15 is held while facing the semiconductor board 13. Further, an electrolytic solution 16 containing the metal of the same quality as the materials of the pattern is sealed into the chamber 10, the semiconductor board 13 is irradiated with parallel beams from the opening OP on the mask 12 through the supporting stand 10a and the transparent electrode 11. While using the conductor film 15 as an anode and using the transparent electrode 11 as a cathode, a voltage is impressed between both the electrodes. Then, by etching the conductor film 15, a portion corresponding to the opening OP on the mask 12 is removed and a conductor pattern 15a is formed.
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