发明名称 METHOD OF FORMING WIRING
摘要 <p>PROBLEM TO BE SOLVED: To form the wiring having protruded angular parts having roughly 90 deg. and recessed parts having roughly 90 deg. so as to be close to a designed form even when a pattern is made fine. SOLUTION: An exposure mask 32 is used at the time of forming a photoresist film for forming the roughly L-shaped drain electrode and the straight line-shaped source electrode of a thin film transistor. In this case, an oblique line part is a light shielding part and an auxiliary transmission part 32d is provided at the inner side of the angular part of the inner side of the bending part of a roughly L-shaped light shielding part 32b for a drain electrode and auxiliary light shielding parts 32e are provided at outer sides of angular parts of the both sides of the top end part of the light shielding part 32b and, moreover, auxiliary light shielding parts 32f are provided at outer sides of angular parts of the both sides of the prescribed top end part of a straight line-shaped light shielding part for a source electrode 32c. As a result, a phenomenon that rays of light do not enter the bending part is almost eliminated in the auxiliary transmission part 32d and phenomena that rays of light reach to angular parts are almost eliminated in auxiliary light shielding parts 32e, 32f.</p>
申请公布号 JP2002116459(A) 申请公布日期 2002.04.19
申请号 JP20000307858 申请日期 2000.10.06
申请人 CASIO COMPUT CO LTD 发明人 WATANABE HITOSHI
分类号 G02F1/1343;G02F1/136;G02F1/1368;G03F1/00;G03F1/70;G03F7/20;H01L21/027;H01L21/28;H01L21/3205;H01L21/768;(IPC1-7):G02F1/136;G03F1/08;G02F1/134;H01L21/320 主分类号 G02F1/1343
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