发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To reduce a minimum power source voltage of a current switch type D-FF to 1 V or less without sacrificing a rapidity and to commonly use the power source voltage for a radio section and a base band section of a low voltage operation. SOLUTION: A semiconductor integrated circuit comprises various type elements formed on an SOI substrate to constitute a current switching type D-FF. The integrated circuit further comprises a MOS transistor M1 connected at its drain to a node M and at its source to a node E1, input at its gate with a signal D, and input at its body with a clock CK; a MOS transistor M2 connected at its drain to a node MN and at its source to a node E1, input at its gate with a complementary signal DN of the signal D, and input at its body with a clock CK; a resistance element R1 connected between a power source end VDD and the node M; a resistance element R2 connected between the end VDD and the node MN; and a constant-current source I1 connected between the node E1 and a ground terminal VSS.</p>
申请公布号 JP2002118446(A) 申请公布日期 2002.04.19
申请号 JP20000305404 申请日期 2000.10.04
申请人 TOSHIBA CORP 发明人 FUSE TSUNEAKI;KAMEYAMA ATSUSHI
分类号 H03K3/3562;(IPC1-7):H03K3/356 主分类号 H03K3/3562
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