| 摘要 |
<p>PROBLEM TO BE SOLVED: To keep oxygen content under a specified threshold by efficiently controlling the oxygen quantity mixed in a polysilicon film annealed by excimer- laser annealed. SOLUTION: This laser-annealing apparatus for treating a semiconductor material, having a surface is provided with (a) a laser which directs the beam to a position on the surface of the semiconductor material, and (b) a nozzle which feeds gas flow to the position on the surface of the semiconductor material for removing surrounding air from the position to which the beam has been directed. A kit for modifying existing laser-annealing equipment is provided, with (a) at least a nozzle that excludes surrounding air from the target area, to which the laser beam is directed so as to anneal the target material.</p> |
