| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor having high mobility with improved reproducibility. SOLUTION: In the thin film transistor, a laser beam oscillating continuously is applied to an amorphous semiconductor thin film where the concentration of carbon, nitrogen, and oxygen is equal to or less than 5×1019 cm-3, and a semiconductor thin film obtained by crystallization without melting the amorphous semiconductor thin film is used for a channel formation region. By selecting this sort of crystallization method, the thin film transistor with high mobility can be provided with improved reproducibility.
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