发明名称 SEMICONDUCTOR MANUFACTURING DEVICE
摘要 PROBLEM TO BE SOLVED: To eliminate organic matters from a substrate before throwing the substrate into a reaction chamber. SOLUTION: The vertical semiconductor manufacturing device has a reaction chamber 1 for treating a number of substrates W loaded to a boat 3, and a transfer chamber 10 having a mechanism for conveying the substrate W where the boat 3 is put in the reaction chamber 1. The transfer chamber 10 is composed by a nitrogen purge box or a load lock chamber to control remaining oxygen between the substrates W. An organic matter elimination mechanism 30 is provided between the transfer and reaction chambers 10 and 1. The organic matter elimination mechanism 30 supplies a very small amount of an oxygen- family gas such as O2 and O3 gases between the substrates before the substrate W is thrown into the reaction chamber 1, and additionally supplies an nitrogen N2 gas between the substrates W for eliminating the organic matters from the substrate W.
申请公布号 JP2002118105(A) 申请公布日期 2002.04.19
申请号 JP20000307256 申请日期 2000.10.06
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 IZUMI MANABU;SAITO SHINJI
分类号 H01L21/302;H01L21/22;H01L21/3065;H01L21/31;(IPC1-7):H01L21/31;H01L21/306 主分类号 H01L21/302
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