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发明名称
ENCAPSULATED TUNGSTEN GATE MOS TRANSISTOR AND MEMORY CELL AND METHOD OF MAKING SAME
摘要
申请公布号
KR20020029772(A)
申请公布日期
2002.04.19
申请号
KR1020027002807
申请日期
2002.02.28
申请人
发明人
分类号
H01L27/115;H01L21/8247;H01L29/788
主分类号
H01L27/115
代理机构
代理人
主权项
地址
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