摘要 |
PROBLEM TO BE SOLVED: To provide an ashing apparatus, capable of uniformly removing resists of all substrates by suppressing irregularities in the removing rate of the resist, generated due to a temperature in a reaction furnace in the apparatus for simultaneously removing the resists of the substrates by superposing and holding the substrates formed with the resists on the surfaces in a plurality of stages in the furnace. SOLUTION: The ashing apparatus comprises the reaction furnace 2, a boat 11 for superposing and holding the plurality of wafers W in a plurality of stages in a longitudinal direction in the furnace 2, inserting and drawing the wafers W to and from the furnace 2, a heating means for heating the wafers W provided in the boat, and a thermocouple 61 for detecting the temperature distribution in the longitudinal direction in the furnace 2.
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