| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor member of high quality which is not affected by flow pattern defect and COP. SOLUTION: This method is provided with a process for preparing a first base substance having a silicon substrate 11, an epitaxial compound semiconductor layer 12 arranged on the silicon substrate and an ion implanted layer 14, a process wherein the first base substance is so stuck to a second base substance 15 that a multilayer structure having the epitaxial compound semiconductor layer therein is obtained, and an isolation process wherein the multilayer structure is isolated from the ion implanted layer 14. The silicon substrate constituting the first base substance is not left on the epitaxial compound semiconductor layer 12 which is transferred to the second base substance 15.
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