| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which setting of burst length can be controlled. SOLUTION: A semiconductor memory comprises flip-flop circuits 1, 2, 3, a command discriminating circuit 4A discriminating an inputted command, and a write-in operation control circuit 6. The flip-flop circuit 3 latches a WBL address, when a first write-in command is inputted. The flip-flop circuit 3 holds the WBL address latched in the previous step, when a second write-in command is inputted. The write-in operation control circuit 6 controls the write-in operation, according to burst length indicated by the WBL address outputted by the flip-flop circuit 3.
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