发明名称 Semiconductor integrated circuit device and method of producing the same
摘要 A semiconductor integrated circuit device has a plurality of CMOS-type base cells arranged on a semiconductor substrate and m wiring layers, and gate array type logic cells are composed of the base cells and the wiring layers. Wiring within and between the logic cells is constituted by using only upper n (n<m) wiring layers. It becomes possible to shorten a development period and reduce a development cost when a gate array type semiconductor integrated circuit device becomes large in scale.
申请公布号 US2002043668(A1) 申请公布日期 2002.04.18
申请号 US20010972117 申请日期 2001.10.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 TOKUNAGA SHINYA;FURUYA SHIGEKI;HINATSU YUUJI
分类号 G06F17/50;H01L27/02;H01L27/10;H01L27/118;H01L29/73;(IPC1-7):H01L27/10 主分类号 G06F17/50
代理机构 代理人
主权项
地址