| 发明名称 |
Method for making programmable resistance memory element |
| 摘要 |
A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form raised portions on an edge of a conductive sidewall layer. The modified conductive sidewall layer is used as an electrode for the memory element.
|
| 申请公布号 |
US2002045323(A1) |
申请公布日期 |
2002.04.18 |
| 申请号 |
US20010891157 |
申请日期 |
2001.06.26 |
| 申请人 |
LOWREY TYLER;KLERSY PATRICK;HUDGENS STEPHEN J.;MAIMON JON |
发明人 |
LOWREY TYLER;KLERSY PATRICK;HUDGENS STEPHEN J.;MAIMON JON |
| 分类号 |
G11C11/56;H01L27/24;H01L45/00;(IPC1-7):H01L21/20 |
主分类号 |
G11C11/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
