| 发明名称 |
PROCESSING APPARATUS AND CLEANING METHOD |
| 摘要 |
In a chamber (11), a SiOF film is formed on a wafer W using a plasma CVD method. A film remaining inside the chamber (11) is cleaned up using a gas containing NF3. A manometer (28) is prepared for the chamber (11). An end point of cleaning of the chamber (11) is detected by monitoring the pressure inside the chamber (11). |
| 申请公布号 |
WO0212585(A3) |
申请公布日期 |
2002.04.18 |
| 申请号 |
WO2001JP06785 |
申请日期 |
2001.08.07 |
| 申请人 |
TOKYO ELECTRON LIMITED;FUKIAGE, NORIAKI |
发明人 |
FUKIAGE, NORIAKI |
| 分类号 |
B08B7/00;C23C16/44;C23F4/00;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
B08B7/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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