发明名称 Ferroelectric memory and method for manufacturing the same
摘要 A capacitor upper electrode and a wiring are electrically connected to each other by using a plug and a conductive layer formed below a capacitive element without using a plug that directly connects the capacitor upper electrode to the wiring provided thereon via an interlayer insulating film therebetween. Alternatively, the capacitor upper electrode is covered by a conductive hydrogen barrier film, and the capacitor upper electrode and the wiring are electrically connected to each other via both a plug connecting the wiring and the conductive hydrogen barrier film to each other and the conductive hydrogen barrier film.
申请公布号 US2002045311(A1) 申请公布日期 2002.04.18
申请号 US20010968948 申请日期 2001.10.03
申请人 MIKAWA TAKUMI 发明人 MIKAWA TAKUMI
分类号 H01L21/02;H01L21/285;H01L21/768;H01L21/8239;H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):H01L21/00;H01L21/824 主分类号 H01L21/02
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