| 摘要 |
<p>A method for forming an indium tin oxide thin film on a substrate in the present invention includes the steps of introducing a mixture of an inert gas (30) and a low electron affinity element (8) in close proximity to a target (4) as a primary sputter ion beam source, providing an oxygen gas between the target and the substrate, applying an electrical energy to the target to ionize the mixture, confining electrons generated in the ionization in close proximity to a surface of the target facing towards the substrate, disintegrating negatively charged ions from the target, and forming the indium tin oxide thin film on the substrate.</p> |
