发明名称 |
Method for the preparation of a semiconductor device |
摘要 |
The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.
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申请公布号 |
US2002045133(A1) |
申请公布日期 |
2002.04.18 |
申请号 |
US20010939842 |
申请日期 |
2001.08.28 |
申请人 |
MAEMORI SATOSHI;SATO KAZUFUMI;NITTA KAZUYUKI;OOMORI KATSUMI;TANI KAZUO;KINOSHITA YOHEI;YAMADA TOMOTAKA |
发明人 |
MAEMORI SATOSHI;SATO KAZUFUMI;NITTA KAZUYUKI;OOMORI KATSUMI;TANI KAZUO;KINOSHITA YOHEI;YAMADA TOMOTAKA |
分类号 |
G03F7/039;G03F7/26;H01L21/027;(IPC1-7):G03F7/038 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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