发明名称 |
Plasma etching apparatus and plasma etching method |
摘要 |
A plasma etching apparatus for etching of a sample having an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall and a heating mechanism provided proximate to a top end of the exchangeable jacket for generating heat which radiates toward an interior of the etching chamber, the sample being disposed in the etching chamber. An evacuation system which evacuates the etching chamber, an etching gas supply which supplies an etching gas into the chamber and a plasma generator which generates a plasma for performing etching of the sample in the etching chamber.
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申请公布号 |
US2002043338(A1) |
申请公布日期 |
2002.04.18 |
申请号 |
US20010984052 |
申请日期 |
2001.10.26 |
申请人 |
MASUDA TOSHIO;TAKAHASHI KAZUE;SUEHIRO MITSURU;KAJI TETSUNORI;KANAI SABURO |
发明人 |
MASUDA TOSHIO;TAKAHASHI KAZUE;SUEHIRO MITSURU;KAJI TETSUNORI;KANAI SABURO |
分类号 |
C30B25/10;C23F4/00;C30B25/16;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):C23F1/02 |
主分类号 |
C30B25/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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