| 发明名称 |
Semiconductor raised source-drain structure |
| 摘要 |
A semiconductor structure which includes a raised source and a raised drain. The structure also includes a gate located between the source and drains. The gate defines a first gap between the gate and the source and a second gap between the gate and the drain.
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| 申请公布号 |
US2002043694(A1) |
申请公布日期 |
2002.04.18 |
| 申请号 |
US20010008653 |
申请日期 |
2001.11.09 |
| 申请人 |
GONZALEZ FERNANDO;MOULI CHANDRA |
发明人 |
GONZALEZ FERNANDO;MOULI CHANDRA |
| 分类号 |
H01L21/285;H01L21/336;H01L21/768;H01L23/522;H01L29/417;H01L29/49;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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